@article {15388,
title = {Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method},
journal = {Electron Devices, IEEE Transactions on},
volume = {37},
year = {1990},
month = {1990/04//},
pages = {1031 - 1038},
abstract = {Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from C-V measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate},
keywords = {boundary-value, C-V, carriers;insulated, characteristics;Gaussian, Convergence, convergence;hot-electron, degradation;position, dependence;fixed-point, dependent, device, distribution;potential-dependent, distributions;simulation;threshold, effect, electron, field, gate, interface, iteration, method;fixed-point, methods;hot, methods;semiconductor, models;, numerical, of, peak;MOSFET;energy, problem;boundary-value, problems;convergence, rate;global, states;iterative, technique;geometric, transistors;interface, trap, voltage;two-dimensional},
isbn = {0018-9383},
doi = {10.1109/16.52438},
author = {Gaitan,M. and Mayergoyz, Issak D and Korman,C.E.}
}