TY - CONF
T1 - Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness
T2 - Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Y1 - 1999
A1 - Han,Zhiyi
A1 - Lin,Chung-Kai
A1 - Goldsman,N.
A1 - Mayergoyz, Issak D
A1 - Yu,S.
A1 - Stettler,M.
KW - 30
KW - angstrom;60
KW - angstrom;Boltzmann
KW - Bias
KW - calculations;leakage
KW - charges;spherical
KW - component;tunneling
KW - current
KW - currents;semiconductor
KW - dependence;method
KW - dependence;MOSFET;barrier
KW - device
KW - effect;distribution
KW - equation;DC
KW - equation;MOSFET;WKB
KW - function;first
KW - harmonic
KW - image
KW - leakage
KW - lowering
KW - method
KW - method;gate
KW - model;thermionic
KW - models;tunnelling;
KW - of
KW - oxide
KW - principle
KW - probability;Boltzmann
KW - simulation;gate
KW - thickness
KW - transport
KW - WKB
AB - As device dimensions shrink toward 0.1 mu;m, gate oxides are becoming so thin that MOSFET gate leakage current and oxide degradation are becoming limiting issues. We provide a more rigorous way to calculate gate leakage current. To achieve this we build upon the Spherical Harmonic Method of modeling, which deterministically solves the Boltzmann equation for an entire device. The method gives the distribution function and is 1000 times faster than MC. Once the distribution function is calculated, the tunneling probability is derived from the first principle WKB method. The barrier lowering effect is accounted for by the method of image charges. We calculate gate leakage current as a function of DC bias. The thermionic and tunneling components are compared at different DC bias points. The dependence of gate leakage current on gate oxide thickness is simulated
JA - Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
M3 - 10.1109/SISPAD.1999.799307
ER -