TY - JOUR
T1 - Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method
JF - Electron Devices, IEEE Transactions on
Y1 - 1990
A1 - Gaitan,M.
A1 - Mayergoyz, Issak D
A1 - Korman,C.E.
KW - boundary-value
KW - C-V
KW - carriers;insulated
KW - characteristics;Gaussian
KW - Convergence
KW - convergence;hot-electron
KW - degradation;position
KW - dependence;fixed-point
KW - dependent
KW - device
KW - distribution;potential-dependent
KW - distributions;simulation;threshold
KW - effect
KW - electron
KW - field
KW - gate
KW - interface
KW - iteration
KW - method;fixed-point
KW - methods;hot
KW - methods;semiconductor
KW - models;
KW - numerical
KW - of
KW - peak;MOSFET;energy
KW - problem;boundary-value
KW - problems;convergence
KW - rate;global
KW - states;iterative
KW - technique;geometric
KW - transistors;interface
KW - trap
KW - voltage;two-dimensional
AB - Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from C-V measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate
VL - 37
SN - 0018-9383
CP - 4
M3 - 10.1109/16.52438
ER -