%0 Journal Article
%J Solid-State Electronics
%D 2003
%T Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices
%A Andrei,Petru
%A Mayergoyz, Issak D
%K Fluctuations
%K Mismatch
%K MOSFET
%K Sensitivity analysis
%K Statistics
%K Submicron devices
%X The random doping-induced fluctuations of subthreshold characteristics in MOSFET devices are analyzed. A technique for the computations of sensitivity coefficients and variances of subthreshold parameters is presented and applied to the computation of fluctuations of subthreshold current and gate-voltage swing. This technique is based on the linearization of transport equations with respect to the fluctuating quantities. It is computationally much more efficient than purely “statistical” methods (Monte-Carlo methods) that are based on the simulations of a large number of devices with different doping realizations. The numerical implementation of this technique is discussed and numerous computational results are presented.
%B Solid-State Electronics
%V 47
%P 2055 - 2061
%8 2003/11//
%@ 0038-1101
%G eng
%U http://www.sciencedirect.com/science/article/pii/S0038110103002363
%N 11
%R 10.1016/S0038-1101(03)00236-3