%0 Journal Article
%J VLSI Design
%D 1998
%T Three-Dimensional Hydrodynamic Modeling of MOSFET Devices
%A Kerr,Daniel C.
%A Goldsman,Neil
%A Mayergoyz, Issak D
%X The hydrodynamic (HD) model of semiconductor devices is solved numerically inthree-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model are analyzed to develop a stable discretization. The formulation is stabilized by using a new, higher-order discretization for the relaxation-time approximation (RTA) term of the energy-balance (EB) equation. The developed formulation is used to model the MOSFET.
%B VLSI Design
%V 6
%P 261 - 265
%8 1998///
%@ 1065-514X, 1563-5171
%G eng
%U http://www.hindawi.com/journals/vlsi/1998/060859/abs/
%N 1-4
%R 10.1155/1998/60859